Ultra-violet light-emitting diodes with quasi acceptor-free AlGaN polarization doping
نویسنده
چکیده
The development and application of nitride-based light-emitting diodes (LEDs) is handicapped by the low hole conductivity of Mg-doped layers. Mg-doping becomes increasingly difficult with higher Al-content of the p-AlGaN layers as required for ultraviolet (UV) light emission. Polarization-induced hole doping of graded AlGaN was recently demonstrated as an alternative doping method. Using advanced numerical device simulation, this paper investigates the impact of polarization-doping on the internal device physics of UVLEDs and compares the conventional Ga-face growth to the novel N-face growth direction. Various LED design options are explored to maximize the internal quantum efficiency.
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